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STRUCTURE NAME OF PRODUCT TYPE FUNCTION
Silicon Monolithic Integrated Circuit DC-AC Inverter Control IC
1ch control with Push-Pull Lamp current and voltage sense feed back control Sequencing easily achieved with Soft Start Control Short circuit protection with Timer Latch Under Voltage Lock Out Short circuit protection with over voltage Mode-selectable the operating or stand-by mode by stand-by pin BURST mode controlled by PWM and DC input
Absolute Maximum RatingsTa = 25
Parameter Supply Voltage Operating Temperature Range Storage Temperature Range Power Dissipation Maximum Junction Temperature
*
Symbol VCC Topr Tstg Pd Tjmax
Limits 15 -35+95 -55+125 562* +150
Unit V mW
Pd derated at 4.5mW/ for temperature above Ta = 25 (When mounted on a PCB 70.0mmx70.0mmx1.6mm)
Recommended operating condition
Parameter Supply voltage Drive output frequency BCT oscillation frequency Symbol Vcc fOUT fBCT Limits 4.514.0 20150 0.100.50 Unit V KHz KHz
Status of this document The Japanese version of this document is the official specification. Please use the translation version of this document as a reference to expedite understanding of the official version. If these are any uncertainty in translation version of this document, official version takes priority.
REV. A
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Electric CharacteristicsTa=25VCC=7V
Parameter WHOLE DEVICE Operating current Stand-by current OVER VOLTAGE DETECT FB over voltage detect voltage STAND-BY CONTROL Stand-by voltage H1 High Active Stand-by voltage H2 Low Active Stand-by voltage L TIMER LATCH Timer Latch voltage Timer Latch current OSC BLOCK Active edge Current MAX DUTY Soft start current IS COMP detect Voltage SS COMP detect voltage SRT ON resistance UVLO BLOCK Operating voltage Shut down voltage FEED BACK BLOCK IS threshold voltage VS threshold voltage IS source current 1 IS source current 2 VS source current Output BLOCK N1ch output voltage H N2ch output voltage H N1ch output voltage L N2ch output voltage L N1ch sink resistance N1ch source resistance N2ch sink resistance N2ch source resistance Drive output frequency BURST MODE BOSC Max voltage BOSC Min Voltage BOSC frequency COMP BLOCK Over voltage detect Under voltage detect Hysteresis width Symbol MIN. ICC1 ICC2 Vovf 2.20 Limits TYP. 8 2 2.40 Unit MAX. 16 10 2.60 mA A V System ON DUTY pin0.5V2.0V BURST Dimming100%0% System ON DUTY pin0.5V2.0V BURST Dimming0%100% System OFF Conditions
VstH1
2.3
VCC
V
VstH2 VstL VSCP ISCP Iact MAXDUTY Iss Visc Vss RSRT VuvloH VuvloL Vis Vvs Iis1 Iis2 Ivs VoutN1H VoutN2H VoutN1L VoutN2L RsinkN1 RsourceN1 RsinkN2 RsourceN2 FOUT VburH VburL FBOSC VCOMPH VCOMPL VCOMP
1.4 -0.3 1.9 0.5 1.25/RT 44 1.0 0.45 2.0 4.13 3.94 1.225 1.220 13.0 VCC-0.3 VCC-0.3 58.5 1.94 0.4 252.2 1.92 0.96
2.0 1.0 1.5/RT 46.4 2.0 0.50 2.2 200 4.30 4.10 1.250 1.250 20.0 VCC-0.1 VCC-0.1 0.1 0.1 4 7 4 7 60.0 2.0 0.5 260 2.00 1.00 0.1
2.1 0.8 2.1 1.5 1.75/RT 49 3.0 0.55 2.4 400 4.47 4.26 1.275 1.280 1.5 27.0 1.0
V V V A A % A V V V V V V A A A V V V V kHz V V Hz V V V
fOUT=60kHz
DUTY=2.0V DUTY=0VIS=0.5V
0.3 0.3 8 14 8 14 61.5 2.06 0.6 267.8 2.08 1.04 0.15
Isink = 10mA Isource = 10mA Isink = 10mA Isource = 10mA RT=29.2k fBCT=0.2kHz fBCT=0.2kHz BCT=46420pF
This product is not designed for normal operation with in a radio active environment.
REV. A
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Package Dimensions
Device Mark
(include BURR : 10.35)
BD9893F
Lot No.
SOP16 (unit:mm) Block Diagram
SS RT BCT DUTY VCC
Pin Description
Pin Name RT SRT FB IS VS GND DUTY BCT COMP SCP SS STB N2 PGND N1 VCC
Pin No.
+
OSC STB STB BLOCK BOSC
Function External resistor from RT to GND for adjusting the internal triangle oscillator External resistor from SRT to RT for adjusting the internal triangle oscillator Error amplifier output Error amplifier input Error amplifier input GROUND Control PWM mode and BURST mode External capacitor from BCT to GND for adjusting the BURST triangle oscillator Under, over voltage detect External capacitor from SCP to GND for Timer Latch External capacitor from SS to GND for Soft Start Control Stand-by switch Select the BURST dimming direction FET driver Ground for FET drivers FET driver Supply voltage input
-
1 2
SYSTEM ON/OFF PWM BLOCK
FB
3
LOGIC BLOCK OUTPUT BLOCK N1 N2 PGND
4 5 6 7 8 9
IS
+ 1.25V
F/B BLOCK VCC UVLO
VS
+
1.25V
+
VCC REG Reg BLOCK
10 11
VS IS PROTECT BLOCK
12 13 14
GND
COMP
SCP
SRT
15 16
REV. A
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NOTE FOR USE
When designing the external circuit, including adequate margins for variation between external devices and the IC.Use adequate margins for steady state and transient characteristics. Recommended Operating Range The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended operating range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges, however the variation will be small. Mounting failures, such as misdirection or miscounts, may harm the device. A strong electromagnetic field may cause the IC to malfunction. . The GND pin should be the location within 0.3V compared with the PGND pin
The BD9893F incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of the thermal shutdown circuit is assumed. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened. Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need to be considered when using a device beyond its maximum ratings. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching. Make sure to leave adequate margin for this IC variation. On operating Slow Start Control (SS is less than 2.2V), It does not operate Timer Latch. By STB voltage, BD9893F are changed to 3 states. Therefore, do not input STB pin voltage between one state and the other state (0.81.4V, 2.12.3V). The pin connected a connector need to connect to the resistor for electrical surge destruction. This IC is a monolithic IC which (as shown is Fig-1)has P+ substrate and between the various pins. A P-N junction is formed from this P layer of each pin. For example, the relation between each potential is as follows, (When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.) (When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.) Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin.
Resistance (PinA) (PinB) C Transistor (NPN) B E GND P P N P substrate GND Parasitic diode N P P substrate GND Parasitic diode (PinB) (PinA) B Parasitic diode GND
N
N
C E GND
Other adjacent components
Parasitic diode
Fig-1 Simplified structure of a Bipolar IC
REV. A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
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